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| QuikPAC Module Data General description: The QPP-023 QuikPACTM RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are fabricated using Xemod's advanced design LDMOS process. The gate terminal is connected directly to the control voltage pin, allowing direct control of the bias. The user must supply the proper value of VGS to set the desired quiescent current. QPP-023 200W, 869-894MHz Class AB Power Stage Features: Single Polarity Operation Matched for 50 W RF interfaces XeMOS FET Technology Stable Performance QuikPAC System Compatible QuikClip or Flange Mounting Standard Operating Conditions Parameter Frequency Range Supply (Drain) Voltage Bias (Gate) Voltage Bias (Gate) Current, Average RF Source & Load Impedance Load Impedance for Stable Operation (All Phases) Operating Baseplate Temperature Output Device Thermal Resistance, Channel to Baseplate Symbol F VD VG IG W VSWR TOP Qjc Min 869 26.0 3.0 Nom 28.0 3.5 50 Max 894 32.0 5.0 2.0 10:1 +90 Units MHz VDC VDC mA Ohms C C/W -20 0.4 Maximum Ratings Parameter Supply (Drain) Voltage Control (Gate) Voltage, VD = 0 VDC Input RF Power Load Impedance for continuous operation without damage Output Device Channel Temperature Lead Soldering Temperature Storage Temperature Symbol VD VG PIN VSWR Value 35 15 20 3:1 200 +190 -65 to +150 Units VDC VDC W C C C TSTG Performance at 28VDC & 25C Parameter Supply (Drain) Voltage Quiescent Current (total) Peak Envelope Power at 1 dB Compression (two tone) Gain at 40W PEP (two tone) Gain Variation over frequency at 40W Output (two tone) Input Return Loss (50 W Ref) at 40W PEP (two tone) Drain Efficiency at 200W PEP (two tone) 3 Order IMD Product (2 tone at 200W PEP;1 MHz spacing) IMD Variation - 100 kHz to 25 MHz tone spacing 2 nd rd Symbol VD1,2 IDQ P-1 G DG IRL h Min 27.8 1,800 200 13.0 12.0 32 Nom 28.0 2,000 220 13.5 0.2 15.0 36 -30 1.0 Max 28.2 2,200 Units VDC mA W dB 0.5 dB dB % -28 2.0 dBc dB dBc dBc Harmonic at 200W Pout(single tone) 3 Harmonic at 200W Pout(single tone) rd XEMOD RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATION WITHOUT FURTHER NOTICE. BEFORE THE PRODUCT DESCRIBED HERE IS WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS, THE PERFORMANCE CHARACTERISTICS SHOULD BE VERIFIED BY CONTACTING XEMOD. Xemod QuikPAC Data QPP-023 www.xemod.com Rev. B (07-26-01) Page 1 of 2 Performance at 28VDC & 25C (continued) Parameter Group (Signal) Delay Transmission Phase Flatness CDMA ACPR at 40W Pout AVG CDMA ACPR at 20W Pout AVG CDMA Drain Efficiency at 40W Pout AVG CDMA Drain Efficiency at 20W Pout AVG 46 52 Symbol td Min 4.7 Nom 0.5 47 53 21 15 Max 4.9 1.0 Units ns degrees dB dB % % h h 20 13 Notes: This QuikPAC module requires an externally supplied gate voltage (VGS) on each gate lead (pins 1 and 5) to set the operating point (quiescent current- IDQ) of the power transistors. VGS may be safely set to any voltage in the range listed in the table. This permits a wide range of quiescent current to be used. Since the operating characteristics of the module will vary as IDQ changes, the bias setting will depend on the application. The data provided in the Performance section of this data sheet was obtained with IDQ set to a value within the range listed (a nominal value 10%). This particular value was chosen to optimize gain, IMD performance, and efficiency simultaneously. Gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive oscillations. Bias voltages should never be applied to a module unless it is terminated on both input and output. The VGS corresponding to a specific IDQ will vary from module to module and may vary between the two sides of a dual RF module by as much as 0.10 volts. This is due to the normal die-to-die variation in threshold voltage of LDMOS transistors. Since the gate bias of an LDMOS transistor changes with device temperature, it may be necessary to use a VGS supply with thermal compensation if operation over a wide temperature range is required. Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time-varying waveforms. The RF leads are internally protected against DC voltages up to 100V. Care should be taken to avoid video transients that may damage the active devices. Package Styles This model is available in both C (H10549) and CF (H10895) package styles. Style CF is shown for reference. Please see the applicable outline drawing for specific dimensions. Xemod QuikPAC Data QPP-023 www.xemod.com Rev. B (07-26-01) Page 2 of 2 |
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